Project „LIDER XIV"

Innovative technology for fabricating semi-insulating gallium nitride (GaN) substrates - on the way to p-type substrates

Project is carried out from 2024-01-01  to 2027-01-01

Project Number

LIDER14/0152/2023

Allocated funding

1786303,75 PLN

Project Description

There is a growing demand for gallium nitride monocrystalline substrates for applications in the optoelectronics and electronics industries. In the latter case, it is related to huge expectations for energy transformation and the construction of high-power and high-frequency electronic devices. The main objective of the project is to obtain a non-conductive, highly resistive gallium nitride substrate by implanting ions, which are acceptors, into the conductive semiconductor and bulk diffusion of the implanted dopants during annealing at high temperature and nitrogen pressure. The goal is also to obtain a p-type (hole conductivity) gallium nitride substrate. The annealing process enables electrical activation of the implanted dopants and full reconstruction of the destroyed (after the implantation process) crystal structure. Gallium nitride substrates of the world's highest structural quality and different electrical properties, obtained from crystals grown by ammonothermal and gas-phase methods, will be implanted and annealed. The results of the project meet the needs of the scientific and industrial communities The implementation of the project opens up possibilities for modifying the electrical properties of substrates, eliminating the difficult and costly doping procedure carried out at the stage of the gallium nitride crystallization process.

Project Goal

The main goal of the project is to obtain a non-conductive (semi-insulating) GaN substrate by implanting acceptor ions into a conductive GaN substrate and the bulk diffusion of the implanted dopant under high temperature conditions (T>1300°C) and nitrogen pressures (p>0.3 GPa). The ultimate goal is to obtain a p-type substrate (hole conductivity).

International Collaboration

none

Publications

Project results have been published in:

• in progress

Submitted patents

none

Professor

none

PhD Theses

none

Master theses

none

Lectures

Project results have been presented by:

1. T. Sochacki – “Morphological Evolution During Bulk GaN Growth” -  12th International Workshop on Nitride Semiconductors – 3-8  November 2024 – O’ahu, Hawai’i  – USA – invited talk
2. K. Sierakowski – “Modification of electrical properties of GaN by ion implantation and UHPA” -  European Materials Research Society (E-MRS) - 2024 Fall Meeting – 16-19 September 2024 – Warszawa – Poland – contributed talk
3. T. Sochacki – “Exploring Gallium Nitride Bulk Crystal Growth” -  European Materials Research Society (E-MRS) - 2024 Fall Meeting – 16-19 September 2024 – Warszawa – Poland – contributed talk
4. K. Sierakowski – “Modification of electrical properties of GaN by ion implantation and UHPA” -  12th International Workshop on Nitride Semiconductors – 3-8  November 2024 – O’ahu, Hawai’i  – USA – poster