Project „SONATA-16"

The first AlGaN bulk crystal for efficient UV emitters - breaking the barriers in crystallization using GaN seeds of exceptional structural quality

Project is carried out from 2021-06-18  to 2024-06-17

Project Number

2020/39/D/ST5/01611

Allocated funding

1 459 800,00zł

Project Description

SONATA 16 is a project implemented by the National Science Center, targeting scientists who have obtained their PhD degree within 2 to 7 years prior to the year of application. Applicants have the opportunity to seek funding for basic research projects with durations of 12, 24, or 36 months. This initiative underscores the commitment of the National Science Center to support fundamental research and assist in the professional development of early-career researchers.

Project Goal

The main goal of this project is to investigate the crystallization process of thick layers of aluminum gallium nitride (AlGaN) by HVPE method and demonstrating, first time in the world, a free-standing AlGaN crystal of very high structural quality. Gallium nitride (GaN) seeds of the highest structural quality will be used in the crystal growth processes. The deposited AlGaN layers, up to 300-μm-thick, should be crack-free with a uniform Al composition reaching 30%. They are necessary for fabricating 300 nm UV emitters.

International Collaboration

none

Publications

Project results have been published in:

• in progress

Submitted patents

none

Professor

none

PhD Theses

none

Master theses

Submitted master's thesis at the Chair of Inorganic Chemistry, Faculty of Chemistry, Warsaw University of Technology:

• Crystallization of gallium-aluminum nitride (AlxGa1-xN) thin films by halide vapor phase epitaxy (HVPE) method  (Michał Dąbrowski)

Lectures

Project results have been presented by:

1. T. Sochacki, "Preliminary studies on halide vapor phase epitaxy of AlGaN alloy on GaN substrates", International Conference on Crystal Growth and Epitaxy (ICCGE-20), Naples, Italy (30 July - 4 August) – contributed talk
2. T. Sochacki, “ Preliminary Studies on Halide Vapor Phase Epitaxy of AlGaN Alloy on GaN Substrates”, 14th International Conference on Nitride Semiconductors (ICNS-14), Fukuoka Japan (12-17 November) – contributed talk