Project „OPUS-19"

Point defects in ammonothermal GaN

Project is carried out from 2021-01-14  to 2025-01-13

Project Number

2020/37/B/ST5/03746

Allocated funding

1 429 200,00 PLN

Project Description

OPUS 19 is a call implemented by the National Science Center. It is addressed at researchers at any stage of their research career. Research projects may be carried out over a period of 12, 24, 36 or 48 months and applicants have the opportunity to seek funding for their basic research. Under OPUS 19, funding may be requested for research projects carried out in collaboration with or without partners from foreign research institutions.

Project Goal

The goals of the project are: 1) identification of point defects in bulk ammonothermal GaN crystals of various conductivity, 2) impact of the defect concentration on the electrical and optical properties of bulk GaN, and 3) determination of the microscopic mechanism of change of electrical properties after annealing. A complex analysis and determination of concentration of point defects in ammonothermal GaN will be carried out using various experimental methods. The experimental results will be described using calculations based on the charge neutrality equation to obtain a comprehensive image of point defects in bulk ammonothermal GaN. Knowledge about the type and concentration of point defects in bulk GaN crystals is essential for controlling their purity as well as electrical properties of substrates prepared for specific applications.

International Collaboration

none

Publications

Project results have been published in:

1.         M. A. Reshchikov, M. Vorobiov, K. Grabiańska, M. Zajac, M. Iwinska, M. Bockowski, Journal of Applied Physics, “Defect-related photoluminescence from ammono GaN”, 129 (2021) 095703, https://doi.org/10.1063/5.0045019.

2.        M. Reshchikov, D. Demchenko, D. Ye, O. Andrieiev, M. Vorobiov, K. Grabianska, M. Zajac, P. Nita, M. Iwinska, M. Bockowski, „The effect of annealing on photoluminescence from defects in ammonothermal GaN” Journal of Applied Physics 131 (2022) 035704,  https://doi.org/10.1063/5.0077796.

3.        M. Amilusik, M. Zajac, T. Sochacki, B. Łucznik, M. Fijalkowski, M. Iwinska, D. Włodarczyk, A.K. Somakumar, A. Suchocki, M. Bockowski, “Carbon and Manganese in Semi-Insulating Bulk GaN Crystals”,  Materials 15(7) (2022) 2379,  https://doi.org/10.3390/ma15072379.

4.         L. Konczewicz, E. Litwin-Staszewska, M. Zajac, H. Turski, M. Bockowski, D. Schiavon, M. Chlipała, Malgorzata Iwinska, P Nita, S. Juillaguet, S. Contreras, “Electrical transport properties of highly doped N-type GaN materials”, Semiconductor Science and Technology  37 (2022) 055012, DOI: https://10.1088/1361-6641/ac5e01.

5.         L.Konczewicz, M. Iwinska, E. Litwin-Staszewska, M. Zajac, H. Turski, M. Bockowski, D. Schiavon, M. Chlipała, S. Juillaguet, S. Contreras, “Negative Magnetoresistivity in Highly Doped n-Type GaN”, Materials 15(20) (2022) 7069, https://doi.org/10.3390/ma15207069.

6.         Q. Liu, M. Zajac, M.Iwińska, S. Wang, W. Zhuang, M. Bockowski, X. Wang, “Carbon doped semi-insulating freestanding GaN crystals by ethylene”, Applied Physics Letters 121 (2022) 172103,  https://doi.org/10.1063/5.0118250.

7.         L. Konczewicz, S. Juillaguet, M. Zajac, E. Liwin-Staszewska, M. Al. Khalfioui, M. Leroux, B. Damilano, J. Brault, S. Contreras, “Low-Temperature Electrical Transport Properties of Molecular Beam Epitaxy-Grown Mg-Doped GaN” Subjected to a High-Temperature Annealing Process, Phys. Status Solidi A, 22,  2200769 (22.01.2023), https://doi.org/10.1002/pssa.202200769.

8.         M. Amilusik, M. Zajac, M. Fijalkowski, M. Iwinska, T. Sochacki, D. Wlodarczyk, A.K. Somakumar, R. Jakiela, A. Suchocki, M. Bockowski, “Role of carbon in n-type bulk GaN crystals”, Journal of Crystal growth 632 (2024) 127641, https://doi.org/10.1016/j.jcrysgro.2024.127641.

9.         M. Zajac, P. Kaminski, R. Kozlowski, E. Litwin-Staszewska, R. Piotrzkowski, K. Grabianska, R. Kucharski R. Jakiela, „Formation of Grown-In Nitrogen Vacancies and Interstitials in Highly Mg-Doped Ammonothermal GaN”, MDPI Materials 17 (2024) 1160, https://doi.org/10.3390/ma17051160.

Submitted patents

none

Professor

none

PhD Theses

none

Master theses

none

Lectures

Project results have been presented by:

1. M. Bockowski, „Recent progress in bulk GaN crystal growth” Materials Science and Advanced Electronics Created by Singularity (on-line international conference organized by  Tokyo University); 01-03.02.2021 (invited talk).
2. M. Bockowski, Huawei Strategy and Technology Workshop (STW) 2021, 14-16.10 2021, „GaN-on-GaN technology - challenges and perspectives” (international on-line conference organized by Huawei Corporation), invited talk.
3. M. Bockowski, “Towards GaN-on-GaN high-power electronic devices”, IGIR Open Seminar at Institute of Global Innovation Research, Tokyo University of Agriculture and Technology, Tokyo, Japan, 20.12. 2022 (invited talk).
4. M. Bockowski, “Towards GaN-on-GaN” high-power electronic devices, 2022 European Innovation Stars Workshop, 18.11. 2022 Leuven, Belgium; (invited talk).
5. M. Bockowski, “Towards GaN-on-GaN high-power electronic devices”, Swedish Centre for III-nitride technology (C3NiT), Linkoping, Sweden, 10.11. 2022;  (invited talk).
6. K. Grabianska, R. Kucharski, T. Sochacki, M. Bockowski, “On stress induced polarization effect in ammonothermally-grown GaN crystals” , 9th International Conference on Light -Emitting Devices and Their Industrial Applications, LEDIA-2022, Pacifico-Yokohama, Japan&on-line, 21-22.04 (2022), hybrid mode (on-line participation), invited talk.
7. M. Bockowski, “What has recently been discovered and what we still need to find out about crystallization of truly bulk GaN”, The International Workshop on Nitride Semiconductors (IWN), 09-14.10, 2022 Berlin, Germany; (invited talk).
8. M. Zajac, L. Kończewicz, E. Litwin Staszewska, R. Piotrzkowski, M. Boćkowski, Roman Kozłowski, Paweł Kamiński, “Point defects in ammonothermal GaN”, Institute of High Pressure Physics PAS Seminar on Nitride Semiconductors, 06.02.2023, Warsaw, Poland (invited lecture on seminar presented in hybrid mode).
9. M. Zając, L. Kończewicz, E. Litwin Staszewska, R. Piotrzkowski, Roman Kozłowski, Paweł Kamiński, “Role of Nitrogen Vacancies in Obtaining Semi-Insulating Properties of Ammonothermal GaN:Mg”, 32nd International Conference on Defects in Semiconductors, 10-15.09.2023 Rehoboth Beach, USA, Delaware (contributed talk).
    

Posters:

1. M. Zajac, P. Nita, L. Konczewicz, R. Piotrzkowski, E. Litwin-Staszewska, M.Iwinska, T. Sochacki, R. Kucharski, and M. Bockowski, “High-temperature Properties of Electron Transport in Semi-insulating GaN:Mn Monocrystals”, The International Workshop on Nitride Semiconductors (IWN), October 09-14, 2022 Berlin, Germany.
2. M. Zajac, P. Nita, L. Konczewicz, E. Litwin-Staszewska, R. Piotrzkowski, R. Kucharski, M. Bockowski,R. Kozlowski, P. Kaminski, “Identification and Quantitative Analysis of Point Defects in Semi-Insulating GaN:Mg Ammonothermal: Crystals, The International Workshop on Nitride Semiconductors (IWN), October 09-14, 2022 Berlin, Germany.
3. L. Kończewicz, E. Litwin-Staszewska, M. Zajac, H. Turski, M. Bockowski, D. Schiavon, M. Chlipała, M. Iwinska, P. Nita, S. Juillaguet, S. Contreras, “Electrical transport properties of highly doped n-type GaN material”, The International Workshop on Nitride Semiconductors (IWN), October 09-14, 2022 Berlin, Germany.
4. L. Kończewicz, M. Iwinska, E. Litwin-Staszewska, M. Zajac, H. Turski, M. Bockowski, D. Schiavon, M. Chlipała, S. Juillaguet, S. Contreras, “Negative magnetoresistivity in highly doped N-Type GaN L. Konczewicz”, The International Workshop on Nitride Semiconductors (IWN), October 09-14, 2022 Berlin, Germany.
5. L. Konczewicz, S. Juillaguet, M. Zajac, E. Litwin-Staszewska, M. Al Khalfioui, M. Leroux, B. Damilano, J. Brault, S. Contreras, “Low temperature electrical transport properties of MBE-grown Mg-doped GaN subjected to a high temperature annealing process”, The International Workshop on Nitride Semiconductors (IWN), October 09-14, 2022 Berlin, Germany.
6. M. Zajac, L. Konczewicz, E. Litwin-Staszewska, R. Piotrzkowski, R. Kucharski, R. Kozlowski, P. Kaminski, Observation of Nitrogen vacancies in semi-insulating ammonothermal GaN:Mg, XIV International Conference on Nitride Semiconductors (ICNS), 12-17.11.2023, Fukuoka, Japonia; plakat.